Company profile
Cambridge GaN Devices
Cambridge fabless company designing gallium nitride power transistors and integrated circuits for power conversion in consumer, industrial and automotive systems.
Company overview
Developing gallium nitride power devices for energy-efficient electronics, Cambridge GaN Devices operates as a fabless semiconductor company and originated as a University of Cambridge spin-out. Its ICeGaN technology combines an enhancement-mode GaN HEMT with integrated gate functions, allowing operation with standard silicon gate drivers without negative gate supplies or additional external clamping circuitry. The 650 V portfolio includes H2 and P2 series power ICs, with features including integrated Miller clamps, current sensing on H2 devices and bottom-side-cooled packages. Applications include data centre power supplies, industrial motor drives, renewable energy systems and electric vehicle traction inverters and on-board chargers. The company has also announced a 650 V automotive device with 9 mΩ on-resistance and a long-term collaboration with NXP on GaN-based system solutions. Its UK office is in Cambridge at the Jeffreys Building on Cowley Road, also its Companies House registered address. Cambridge GaN Devices Limited was incorporated in October 2016 and is recorded as active.
Semiconductor activity
Primary capability: Power Semiconductors. Supply-chain role: Fabless semiconductor designer, Power semiconductor supplier.
Technologies and capabilities
- Gallium Nitride / GaN
- Power Electronics
- Gallium nitride power devices
- Enhancement-mode GaN HEMTs
- ICeGaN integrated gate technology
- Integrated Miller clamps
- Integrated current sensing
- No-load and light-load loss reduction circuitry
- Bottom-side-cooled DFN packages
- Gallium nitride
650 V ICeGaN power ICs; H2 series GaN power devices; P2 series GaN power devices; 650 V automotive GaN IC with 9 mΩ on-resistance
Markets served
- Data centre and telecom power supplies
- Industrial motor drives
- Home appliances
- Renewable energy and energy storage
- Electric vehicles
- Uninterruptible power supplies
UK presence
Registered office: Jeffreys Building, Suite 8 St Johns Innovation Park, Cowley Road, Cambridge CB4 0DS. Part of the Cambridge / East of England cluster.
Research links: University of Cambridge spin-out, Participation in the GaNext Consortium, covering technologies for intelligent GaN power modules, Long-term collaboration with NXP Semiconductors on GaN-based system solutions, including early access to next-generation CGD developments.
Funding and transactions
Reports multi-million seed funding and Series A, B and C private investment, alongside five projects funded by iUK, BEIS and EU (Penta). Amounts and dates are not specified in the supplied text.